Ieee ferlet-cavrois 2007 new insights
Web16 mei 2013 · Published in: IEEE Transactions on Electron Devices ( Volume: 60 , Issue: 6 , June 2013 ) Article #: Page (s): 2001 - 2007 Date of Publication: 16 May 2013 ISSN Information: Print ISSN: 0018-9383 Electronic ISSN: 1557-9646 INSPEC Accession Number: 13502181 DOI: 10.1109/TED.2013.2256426 Web9 jul. 2003 · IEEE Transactions on Nuclear Science 12 December 2007 The neutron-induced SEU sensitivity in the 1-10 MeV energy range is investigated using …
Ieee ferlet-cavrois 2007 new insights
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WebA New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation ... IEEE Transactions on Nuclear Science, 2000. Sylvain Girard. Philippe Paillet. Download Download PDF. Full PDF Package Download Full PDF Package. This Paper. A short summary of this paper ... Web1 aug. 2012 · Authors: Veronique Ferlet-Cavrois James R. Schwank Sandra Liu Deakin University Michele Muschitiello European Space Agency Abstract and Figures The effects of heavy-ion test conditions and beam...
WebNeed Help? US & Canada: +1 800 678 4333 Worldwide: +1 732 981 0060 Contact & Support Web10 jan. 2024 · 1) Core model based on standard BSIMSOI [ 17] or EKV-SOI [ 18] platforms for submicron main transistor M front (front Si–SiO 2 interface) with parameters dependent on TID. The type of model platform is selected by designer. 2) Additional subcircuits taking into account radiation-induced effects.
Webradiation hardening (electronics),NAND circuits,flash memories,ion beam effects,Monte Carlo methods,field programmable gate arrays,system-on-chip,three-dimensional … Web14 okt. 2007 · Abstract. Researches on prototype AlGaN/GaN transistors provided evidence for their tolerance to cumulated dose effects. However, only few studies have been done to evaluate their sensitivity to ...
Web12 apr. 2007 · Silicon-on-insulator circuits have been considered less sensitive to single event effects than devices made using bulk technology. However, model experiments have indicated that charge collection occurs not only from the active layer above the buried oxide (BOX) but also from the substrate below the BOX, contrary to the earlier belief. In this …
WebNMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons … dilip buildcon ham projectsWebV. Ferlet-Cavrois's research while affiliated with Netherlands Space Office and other places Overview What is this page? This page lists the scientific contributions of an author, who … fort gordon tasc range 14WebBased on the silicon-on-insulator (SOI) technology and radiation-hardened silicon gate (RSG) process, a radiation-hardened high-voltage lateral double-diffused MOSFET (LDMOS) device is presented in this paper. With the gate supply voltage of 30 V, the LDMOS device has a gate oxide thickness of 120 nm, and the RSG process is effective … fort gordon tasc phone numberhttp://www.jos.ac.cn/article/doi/10.1088/1674-4926/40/5/052401 dilip buildcon job vacancyWebSEGR characterization of power MOSFETs: A new insight on PIGST associated to a non-destructive charge collection measurement tool more by Veronique Ferlet-cavrois In this … dilip buildcon jobs for fresherWebResistive memories workshop Véronique Ferlet -Cavrois ESTEC 30/04/2015 Slide 4 ESA UNCLASSIFIED – For Official Use . Memories in Space Applications . Payload … dilip buildcon head officeWebA New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation . × Close Log In. Log in with Facebook Log in with Google. or. Email. Password. Remember me on this computer. or reset password. Enter the email address you signed up with and we'll email you a reset link. Need ... dilip buildcon ltd job vacancy 2022